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Gate-Tunable Electron Transport Phenomena in Al–Ge⟨111⟩–Al Nanowire Heterostructures
[Image: see text] Electrostatically tunable negative differential resistance (NDR) is demonstrated in monolithic metal–semiconductor–metal (Al–Ge–Al) nanowire (NW) heterostructures integrated in back-gated field-effect transistors (FETs). Unambiguous signatures of NDR even at room temperature are at...
Gorde:
| Argitaratua izan da: | Nano Lett |
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| Egile Nagusiak: | , , |
| Formatua: | Artigo |
| Hizkuntza: | Inglês |
| Argitaratua: |
American Chemical Society
2015
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| Sarrera elektronikoa: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4643355/ https://ncbi.nlm.nih.gov/pubmed/26426433 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/acs.nanolett.5b03169 |
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