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Active and fast charge-state switching of single NV centres in diamond by in-plane Al-Schottky junctions
In this paper, we demonstrate an active and fast control of the charge state and hence of the optical and electronic properties of single and near-surface nitrogen-vacancy centres (NV centres) in diamond. This active manipulation is achieved by using a two-dimensional Schottky-diode structure from d...
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| Yayımlandı: | Beilstein J Nanotechnol |
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| Asıl Yazarlar: | , , , , , , , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Beilstein-Institut
2016
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| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5238644/ https://ncbi.nlm.nih.gov/pubmed/28144522 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.7.165 |
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