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Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices

Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been d...

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Bibliografiske detaljer
Udgivet i:Sci Rep
Main Authors: Huang, Qi-kun, Yan, Yi, Zhang, Kun, Li, Huan-huan, Kang, Shishou, Tian, Yu-feng
Format: Artigo
Sprog:Inglês
Udgivet: Nature Publishing Group 2016
Fag:
Online adgang:https://ncbi.nlm.nih.gov/pmc/articles/PMC5120293/
https://ncbi.nlm.nih.gov/pubmed/27876868
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep37748
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