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Room temperature electrically tunable rectification magnetoresistance in Ge-based Schottky devices

Electrical control of magnetotransport properties is crucial for device applications in the field of spintronics. In this work, as an extension of our previous observation of rectification magnetoresistance, an innovative technique for electrical control of rectification magnetoresistance has been d...

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Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Huang, Qi-kun, Yan, Yi, Zhang, Kun, Li, Huan-huan, Kang, Shishou, Tian, Yu-feng
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2016
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5120293/
https://ncbi.nlm.nih.gov/pubmed/27876868
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep37748
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