NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO(2) stack during resistive switching

We have studied the stability of the resistive switching process in the Al/(In(2)O(3))(0.9)(SnO(2))(0.1)/TiO(2) assembly grown by atomic layer deposition. Besides electrical characterization the effect of electric field on the atomic electronic structure of the TiO(2) layer was studied using near ed...

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Dettagli Bibliografici
Pubblicato in:Sci Technol Adv Mater
Autori principali: Filatova, Elena, Konashuk, Aleksei, Petrov, Yuri, Ubyivovk, Evgeny, Sokolov, Andrey, Selivanov, Andrei, Drozd, Victor
Natura: Artigo
Lingua:Inglês
Pubblicazione: Taylor & Francis 2016
Soggetti:
Optical, Magnetic and Electronic Device Materials
Accesso online:https://ncbi.nlm.nih.gov/pmc/articles/PMC5101899/
https://ncbi.nlm.nih.gov/pubmed/27877880
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1080/14686996.2016.1182851
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