Filatova, E., Konashuk, A., Petrov, Y., Ubyivovk, E., Sokolov, A., Selivanov, A., & Drozd, V. (2016). NEXAFS study of electronic and atomic structure of active layer in Al/indium tin oxide/TiO(2) stack during resistive switching. Sci Technol Adv Mater.

Filatova, Elena, Aleksei Konashuk, Yuri Petrov, Evgeny Ubyivovk, Andrey Sokolov, Andrei Selivanov, a Victor Drozd. "NEXAFS Study of Electronic and Atomic Structure of Active Layer in Al/indium Tin Oxide/TiO(2) Stack During Resistive Switching." Sci Technol Adv Mater 2016.

Filatova, Elena, et al. "NEXAFS Study of Electronic and Atomic Structure of Active Layer in Al/indium Tin Oxide/TiO(2) Stack During Resistive Switching." Sci Technol Adv Mater 2016.