Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

類似資料

• Fabrication and dimensional scaling of SiNW-FET array via AFM-LAO lithography and self-limiting oxidation
  著者:: Nurain Najihah Alias, 等
  出版事項: (2025-09-01)
• The use of tetramethylammonium hydroxide in the Zimmermann reaction
  著者:: James, V. H. T., 等
  出版事項: (1961)
• Lithography-free fabrication of silicon nanowire and nanohole arrays by metal-assisted chemical etching
  著者:: Liu, Ruiyuan, 等
  出版事項: (2013)
• Effect of Isopropyl Alcohol Concentration and Etching Time on Wet Chemical Anisotropic Etching of Low-Resistivity Crystalline Silicon Wafer
  著者:: Abdur-Rahman, Eyad, 等
  出版事項: (2017)
• Highly Aligned Polymeric Nanowire Etch-Mask Lithography Enabling the Integration of Graphene Nanoribbon Transistors
  著者:: Jeon, Sangheon, 等
  出版事項: (2020)