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Effect of tetramethylammonium hydroxide/isopropyl alcohol wet etching on geometry and surface roughness of silicon nanowires fabricated by AFM lithography

The optimization of etchant parameters in wet etching plays an important role in the fabrication of semiconductor devices. Wet etching of tetramethylammonium hydroxide (TMAH)/isopropyl alcohol (IPA) on silicon nanowires fabricated by AFM lithography is studied herein. TMAH (25 wt %) with different I...

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Detalhes bibliográficos
Publicado no:Beilstein J Nanotechnol
Main Authors: Yusoh, Siti Noorhaniah, Yaacob, Khatijah Aisha
Formato: Artigo
Idioma:Inglês
Publicado em: Beilstein-Institut 2016
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC5082450/
https://ncbi.nlm.nih.gov/pubmed/27826521
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.3762/bjnano.7.138
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