Enhanced optoelectronic performances of vertically aligned hexagonal boron nitride nanowalls-nanocrystalline diamond heterostructures

Field electron emission (FEE) properties of vertically aligned hexagonal boron nitride nanowalls (hBNNWs) grown on Si have been markedly enhanced through the use of nitrogen doped nanocrystalline diamond (nNCD) films as an interlayer. The FEE properties of hBNNWs-nNCD heterostructures show a low tur...

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Dades bibliogràfiques
Publicat a:Sci Rep
Autors principals: Sankaran, Kamatchi Jothiramalingam, Hoang, Duc Quang, Kunuku, Srinivasu, Korneychuk, Svetlana, Turner, Stuart, Pobedinskas, Paulius, Drijkoningen, Sien, Van Bael, Marlies K., D’ Haen, Jan, Verbeeck, Johan, Leou, Keh-Chyang, Lin, I-Nan, Haenen, Ken
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group 2016
Matèries:
Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4941520/
https://ncbi.nlm.nih.gov/pubmed/27404130
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep29444
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