Nalaganje...
Integration scheme of nanoscale resistive switching memory using bottom-up processes at room temperature for high-density memory applications
A facile and versatile scheme is demonstrated to fabricate nanoscale resistive switching memory devices that exhibit reliable bipolar switching behavior. A solution process is used to synthesize the copper oxide layer into 250-nm via-holes that had been patterned in Si wafers. Direct bottom-up filli...
Shranjeno v:
| izdano v: | Sci Rep |
|---|---|
| Main Authors: | , |
| Format: | Artigo |
| Jezik: | Inglês |
| Izdano: |
Nature Publishing Group
2016
|
| Teme: | |
| Online dostop: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4929478/ https://ncbi.nlm.nih.gov/pubmed/27364856 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep28966 |
| Oznake: |
Označite
Brez oznak, prvi označite!
|