Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO(2) Memristor

Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated tha...

Celý popis

Uloženo v:
Podrobná bibliografie
Vydáno v:Sci Rep
Hlavní autoři: Jiang, Hao, Han, Lili, Lin, Peng, Wang, Zhongrui, Jang, Moon Hyung, Wu, Qing, Barnell, Mark, Yang, J. Joshua, Xin, Huolin L., Xia, Qiangfei
Médium: Artigo
Jazyk:Inglês
Vydáno: Nature Publishing Group 2016
Témata:
Article
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC4917839/
https://ncbi.nlm.nih.gov/pubmed/27334443
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep28525
Tagy: Přidat tag
Žádné tagy, Buďte první, kdo otaguje tento záznam!

Podobné jednotky