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Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO(2) Memristor
Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated tha...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4917839/ https://ncbi.nlm.nih.gov/pubmed/27334443 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep28525 |
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