Sub-10 nm Ta Channel Responsible for Superior Performance of a HfO(2) Memristor

Memristive devices are promising candidates for the next generation non-volatile memory and neuromorphic computing. It has been widely accepted that the motion of oxygen anions leads to the resistance changes for valence-change-memory (VCM) type of materials. Only very recently it was speculated tha...

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Publicat a:Sci Rep
Autors principals: Jiang, Hao, Han, Lili, Lin, Peng, Wang, Zhongrui, Jang, Moon Hyung, Wu, Qing, Barnell, Mark, Yang, J. Joshua, Xin, Huolin L., Xia, Qiangfei
Format: Artigo
Idioma:Inglês
Publicat: Nature Publishing Group 2016
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Article
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4917839/
https://ncbi.nlm.nih.gov/pubmed/27334443
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep28525
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