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A Multi-level Memristor Based on Al-Doped HfO(2) Thin Film
Non-volatile memory (NVM) will play a very important role in the next-generation digital technologies, including the Internet of things. The metal-oxide memristors, especially based on HfO(2), have been favored by lots of researchers because of its simple structure, high integration, fast operation...
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| Yayımlandı: | Nanoscale Res Lett |
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| Asıl Yazarlar: | , , , , |
| Materyal Türü: | Artigo |
| Dil: | Inglês |
| Baskı/Yayın Bilgisi: |
Springer US
2019
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| Konular: | |
| Online Erişim: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6538729/ https://ncbi.nlm.nih.gov/pubmed/31139948 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-019-3015-x |
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