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Habituation/Fatigue behavior of a synapse memristor based on IGZO–HfO(2) thin film
A synaptic memristor based on IGZO and oxygen-deficient HfO(2) films has been demonstrated. The memristor exhibits a fatigue response to a monotonic stimulus of voltage pulses, which is analogous to the habituation behavior of biological memory. The occurrence of habituation is nearly simultaneous w...
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| Publicado en: | Sci Rep |
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| Main Authors: | , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado: |
Nature Publishing Group UK
2017
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| Assuntos: | |
| Acceso en liña: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5571151/ https://ncbi.nlm.nih.gov/pubmed/28839216 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-09762-5 |
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