Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

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Bibliographic Details
Published in:	Nat Commun
Main Authors:	Penumatcha, Ashish V., Salazar, Ramon B., Appenzeller, Joerg
Format:	Artigo
Language:	Inglês
Published:	Nature Publishing Group 2016
Subjects:	Corrigenda
Online Access:	https://ncbi.nlm.nih.gov/pmc/articles/PMC4897739/ https://ncbi.nlm.nih.gov/pubmed/27265156 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms11913
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