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Corrigendum: Analysing black phosphorus transistors using an analytic Schottky barrier MOSFET model

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Bibliografske podrobnosti
izdano v:Nat Commun
Main Authors: Penumatcha, Ashish V., Salazar, Ramon B., Appenzeller, Joerg
Format: Artigo
Jezik:Inglês
Izdano: Nature Publishing Group 2016
Teme:
Online dostop:https://ncbi.nlm.nih.gov/pmc/articles/PMC4897739/
https://ncbi.nlm.nih.gov/pubmed/27265156
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/ncomms11913
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