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Integrating Epitaxial-Like Pb(Zr,Ti)O(3) Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor
The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed i...
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| Publicado en: | Sci Rep |
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| Autores principales: | , , , , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Publishing Group
2016
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4804328/ https://ncbi.nlm.nih.gov/pubmed/27005886 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep23189 |
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