A carregar...
Integrating Epitaxial-Like Pb(Zr,Ti)O(3) Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor
The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed i...
Na minha lista:
| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2016
|
| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4804328/ https://ncbi.nlm.nih.gov/pubmed/27005886 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep23189 |
| Tags: |
Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!
|