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Anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using double AlN buffer layers
We report the anisotropic structural and optical properties of semi-polar (11–22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer lay...
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| Vydáno v: | Sci Rep |
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| Hlavní autoři: | , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2016
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4748300/ https://ncbi.nlm.nih.gov/pubmed/26861595 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep20787 |
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