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A multi-subband Monte Carlo study on dominance of scattering mechanisms over carrier transport in sub-10-nm Si nanowire FETs

Dominance of various scattering mechanisms in determination of the carrier mobility is examined for silicon (Si) nanowires of sub-10-nm cross-sections. With a focus on p-type channels, the steady-state hole mobility is studied with multi-subband Monte Carlo simulations to consider quantum effects in...

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Detalhes bibliográficos
Publicado no:Nanoscale Res Lett
Autor principal: Ryu, Hoon
Formato: Artigo
Idioma:Inglês
Publicado em: Springer US 2016
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4729720/
https://ncbi.nlm.nih.gov/pubmed/26815605
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-016-1249-4
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