Llwytho...
Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors
Silicon nanowire (NW) field-effect transistor (FET) sensors of various lengths were fabricated. Transport properties of Si NW FET sensors were investigated involving noise spectroscopy and current–voltage (I–V) characterization. The static I–V dependencies demonstrate the high quality of fabricated...
Wedi'i Gadw mewn:
| Cyhoeddwyd yn: | Nanoscale Res Lett |
|---|---|
| Prif Awduron: | , , , , |
| Fformat: | Artigo |
| Iaith: | Inglês |
| Cyhoeddwyd: |
Springer US
2018
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| Pynciau: | |
| Mynediad Ar-lein: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5871613/ https://ncbi.nlm.nih.gov/pubmed/29589128 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2494-5 |
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