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Photoconductivity, pH Sensitivity, Noise, and Channel Length Effects in Si Nanowire FET Sensors
Silicon nanowire (NW) field-effect transistor (FET) sensors of various lengths were fabricated. Transport properties of Si NW FET sensors were investigated involving noise spectroscopy and current–voltage (I–V) characterization. The static I–V dependencies demonstrate the high quality of fabricated...
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| Publié dans: | Nanoscale Res Lett |
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| Auteurs principaux: | , , , , |
| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
Springer US
2018
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| Sujets: | |
| Accès en ligne: | https://ncbi.nlm.nih.gov/pmc/articles/PMC5871613/ https://ncbi.nlm.nih.gov/pubmed/29589128 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-018-2494-5 |
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