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Horizontal transfer of aligned Si nanowire arrays and their photoconductive performance
An easy and low-cost method to transfer large-scale horizontally aligned Si nanowires onto a substrate is reported. Si nanowires prepared by metal-assisted chemical etching were assembled and anchored to fabricate multiwire photoconductive devices with standard Si technology. Scanning electron micro...
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| Опубликовано в: : | Nanoscale Res Lett |
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| Главные авторы: | , , , , , , , , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Springer
2014
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4266530/ https://ncbi.nlm.nih.gov/pubmed/25520603 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-661 |
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