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Enhanced photoluminescence of multilayer Ge quantum dots on Si(001) substrates by increased overgrowth temperature
Four-bilayer Ge quantum dots (QDs) with Si spacers were grown on Si(001) substrates by ultrahigh vacuum chemical vapor deposition. In three samples, all Ge QDs were grown at 520 °C, while Si spacers were grown at various temperatures (520 °C, 550 °C, and 580 °C). Enhancement and redshift of room tem...
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| Główni autorzy: | , , , , , |
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| Format: | Artigo |
| Język: | Inglês |
| Wydane: |
Springer
2012
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| Hasła przedmiotowe: | |
| Dostęp online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC3442976/ https://ncbi.nlm.nih.gov/pubmed/22784702 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-7-383 |
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