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Electrochemical gating-induced reversible and drastic resistance switching in VO(2) nanowires
Reversible and drastic modulation of the transport properties in vanadium dioxide (VO(2)) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowe...
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| Опубликовано в: : | Sci Rep |
|---|---|
| Главные авторы: | , , , |
| Формат: | Artigo |
| Язык: | Inglês |
| Опубликовано: |
Nature Publishing Group
2015
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| Предметы: | |
| Online-ссылка: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4653652/ https://ncbi.nlm.nih.gov/pubmed/26584679 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep17080 |
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