Enhanced electronic-transport modulation in single-crystalline VO(2) nanowire-based solid-state field-effect transistors

Field-effect transistors using correlated electron materials with an electronic phase transition pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. Here, we present a new finding in gate-bias-induced electronic transport sw...

Täydet tiedot

Tallennettuna:
Bibliografiset tiedot
Julkaisussa:Sci Rep
Päätekijät: Wei, Tingting, Kanki, Teruo, Chikanari, Masashi, Uemura, Takafumi, Sekitani, Tsuyoshi, Tanaka, Hidekazu
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Publishing Group UK 2017
Aiheet:
Article
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC5722937/
https://ncbi.nlm.nih.gov/pubmed/29222452
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-017-17468-x
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