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Resistive switching studies in VO(2) thin films
The hysteretic insulator-to-metal transition of VO(2) is studied in detail for pulsed laser deposition grown thin films on TiO(2) substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the...
में बचाया:
| में प्रकाशित: | Sci Rep |
|---|---|
| मुख्य लेखकों: | , , , |
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Nature Publishing Group UK
2020
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC7040009/ https://ncbi.nlm.nih.gov/pubmed/32094385 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-020-60373-z |
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