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Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials
Phonon transport in Si films was controlled using epitaxially-grown ultrasmall Ge nanodots (NDs) with ultrahigh density for the purpose of developing Si-based thermoelectric materials. The Si/Ge ND stacked structures, which were formed by the ultrathin SiO(2) film technique, exhibited lower thermal...
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| Publicado en: | Sci Rep |
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| Autores principales: | , , , , |
| Formato: | Artigo |
| Lenguaje: | Inglês |
| Publicado: |
Nature Publishing Group
2015
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| Materias: | |
| Acceso en línea: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4592960/ https://ncbi.nlm.nih.gov/pubmed/26434678 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep14490 |
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