Caricamento...
Phonon transport control by nanoarchitecture including epitaxial Ge nanodots for Si-based thermoelectric materials
Phonon transport in Si films was controlled using epitaxially-grown ultrasmall Ge nanodots (NDs) with ultrahigh density for the purpose of developing Si-based thermoelectric materials. The Si/Ge ND stacked structures, which were formed by the ultrathin SiO(2) film technique, exhibited lower thermal...
Salvato in:
| Pubblicato in: | Sci Rep |
|---|---|
| Autori principali: | , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Nature Publishing Group
2015
|
| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4592960/ https://ncbi.nlm.nih.gov/pubmed/26434678 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep14490 |
| Tags: |
Aggiungi Tag
Nessun Tag, puoi essere il primo ad aggiungerne! !
|