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Pressure-sensitive liquid phase epitaxy of highly-doped n-type SiGe crystals for thermoelectric applications
Based on recent works, the most desirable high-temperature thermoelectric material would be highly-doped Si(1−x)Ge(x) crystals or films with sufficiently high Ge concentrations so that simultaneous enhancing the power factor and wave-engineering of phonons could be possible on the ballistic thermal...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group UK
2019
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC6416246/ https://ncbi.nlm.nih.gov/pubmed/30867457 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/s41598-019-39786-y |
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