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Modeling of switching mechanism in GeSbTe chalcogenide superlattices
We study the switching process in chalcogenide superlattice (CSL) phase-change memory materials by describing the motion of an atomic layer between the low and high resistance states. Two models have been proposed by different groups based on high-resolution electron microscope images. Model 1 propo...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2015
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4518231/ https://ncbi.nlm.nih.gov/pubmed/26219904 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep12612 |
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