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Modeling of switching mechanism in GeSbTe chalcogenide superlattices

We study the switching process in chalcogenide superlattice (CSL) phase-change memory materials by describing the motion of an atomic layer between the low and high resistance states. Two models have been proposed by different groups based on high-resolution electron microscope images. Model 1 propo...

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Détails bibliographiques
Publié dans:Sci Rep
Auteurs principaux: Yu, Xiaoming, Robertson, John
Format: Artigo
Langue:Inglês
Publié: Nature Publishing Group 2015
Sujets:
Accès en ligne:https://ncbi.nlm.nih.gov/pmc/articles/PMC4518231/
https://ncbi.nlm.nih.gov/pubmed/26219904
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep12612
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