A carregar...

Modeling of switching mechanism in GeSbTe chalcogenide superlattices

We study the switching process in chalcogenide superlattice (CSL) phase-change memory materials by describing the motion of an atomic layer between the low and high resistance states. Two models have been proposed by different groups based on high-resolution electron microscope images. Model 1 propo...

ver descrição completa

Na minha lista:
Detalhes bibliográficos
Publicado no:Sci Rep
Main Authors: Yu, Xiaoming, Robertson, John
Formato: Artigo
Idioma:Inglês
Publicado em: Nature Publishing Group 2015
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC4518231/
https://ncbi.nlm.nih.gov/pubmed/26219904
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep12612
Tags: Adicionar Tag
Sem tags, seja o primeiro a adicionar uma tag!