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Electronic Structure of Low-Temperature Solution-Processed Amorphous Metal Oxide Semiconductors for Thin-Film Transistor Applications
The electronic structure of low temperature, solution-processed indium–zinc oxide thin-film transistors is complex and remains insufficiently understood. As commonly observed, high device performance with mobility >1 cm(2) V(−1) s(−1) is achievable after annealing in air above typically 250 °C bu...
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| Publicado no: | Adv Funct Mater |
|---|---|
| Main Authors: | , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
BlackWell Publishing Ltd
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4503976/ https://ncbi.nlm.nih.gov/pubmed/26190964 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1002/adfm.201404375 |
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