High Performance, Low Temperature Solution-Processed Barium and Strontium Doped Oxide Thin Film Transistors

[Image: see text] Amorphous mixed metal oxides are emerging as high performance semiconductors for thin film transistor (TFT) applications, with indium gallium zinc oxide, InGaZnO (IGZO), being one of the most widely studied and best performing systems. Here, we investigate alkaline earth (barium or...

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Hlavní autoři: Banger, Kulbinder K., Peterson, Rebecca L., Mori, Kiyotaka, Yamashita, Yoshihisa, Leedham, Timothy, Sirringhaus, Henning
Médium: Artigo
Jazyk:Inglês
Vydáno: American Chemical Society 2013
On-line přístup:https://ncbi.nlm.nih.gov/pmc/articles/PMC3914394/
https://ncbi.nlm.nih.gov/pubmed/24511184
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1021/cm4035837
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