The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes

In this study, we have grown 380-nm ultraviolet light-emitting diodes (UV-LEDs) based on InGaN/AlInGaN multiple quantum well (MQW) structures on free-standing GaN (FS-GaN) substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD), and investigated the relationship between...

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Dades bibliogràfiques
Publicat a:Nanoscale Res Lett
Autors principals: Tsai, Ming-Ta, Chu, Chung-Ming, Huang, Che-Hsuan, Wu, Yin-Hao, Chiu, Ching-Hsueh, Li, Zhen-Yu, Tu, Po-Min, Lee, Wei-I, Kuo, Hao-Chung
Format: Artigo
Idioma:Inglês
Publicat: Springer US 2014
Matèries:
Nano Express
Accés en línia:https://ncbi.nlm.nih.gov/pmc/articles/PMC4494039/
https://ncbi.nlm.nih.gov/pubmed/26088993
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-675
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