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The effect of free-standing GaN substrate on carrier localization in ultraviolet InGaN light-emitting diodes
In this study, we have grown 380-nm ultraviolet light-emitting diodes (UV-LEDs) based on InGaN/AlInGaN multiple quantum well (MQW) structures on free-standing GaN (FS-GaN) substrate by atmospheric pressure metal-organic chemical vapor deposition (AP-MOCVD), and investigated the relationship between...
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| Veröffentlicht in: | Nanoscale Res Lett |
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| Hauptverfasser: | , , , , , , , , |
| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer US
2014
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4494039/ https://ncbi.nlm.nih.gov/pubmed/26088993 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-675 |
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