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Intersubband Transition in GaN/InGaN Multiple Quantum Wells
Utilizing the growth temperature controlled epitaxy, high quality GaN/In(0.15)Ga(0.85)N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time. Photo-absorption originated...
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| Vydáno v: | Sci Rep |
|---|---|
| Hlavní autoři: | , , , , , , , , |
| Médium: | Artigo |
| Jazyk: | Inglês |
| Vydáno: |
Nature Publishing Group
2015
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| Témata: | |
| On-line přístup: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4473535/ https://ncbi.nlm.nih.gov/pubmed/26089133 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep11485 |
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