Intersubband Transition in GaN/InGaN Multiple Quantum Wells

Utilizing the growth temperature controlled epitaxy, high quality GaN/In(0.15)Ga(0.85)N multiple quantum wells designed for intersubband transition (ISBT) as novel candidates in III-nitride infrared device applications have been experimentally realized for the first time. Photo-absorption originated...

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Bibliographic Details
Published in:Sci Rep
Main Authors: Chen, G., Wang, X. Q., Rong, X., Wang, P., Xu, F. J., Tang, N., Qin, Z. X., Chen, Y. H., Shen, B.
Format: Artigo
Language:Inglês
Published: Nature Publishing Group 2015
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Article
Online Access:https://ncbi.nlm.nih.gov/pmc/articles/PMC4473535/
https://ncbi.nlm.nih.gov/pubmed/26089133
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep11485
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