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Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells
AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport....
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| Publicado no: | Sci Rep |
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| Main Authors: | , , , , , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4585772/ https://ncbi.nlm.nih.gov/pubmed/26395756 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep14386 |
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