Mid-infrared Photoconductive Response in AlGaN/GaN Step Quantum Wells

AlGaN/GaN quantum structure is an excellent candidate for high speed infrared detectors based on intersubband transitions. However, fabrication of AlGaN/GaN quantum well infrared detectors suffers from polarization-induced internal electric field, which greatly limits the carrier vertical transport....

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Bibliografiset tiedot
Julkaisussa:Sci Rep
Päätekijät: Rong, X., Wang, X. Q., Chen, G., Zheng, X. T., Wang, P., Xu, F. J., Qin, Z. X., Tang, N., Chen, Y. H., Sang, L. W., Sumiya, M., Ge, W. K., Shen, B.
Aineistotyyppi: Artigo
Kieli:Inglês
Julkaistu: Nature Publishing Group 2015
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Article
Linkit:https://ncbi.nlm.nih.gov/pmc/articles/PMC4585772/
https://ncbi.nlm.nih.gov/pubmed/26395756
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep14386
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