High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate

In this work, the influence of micro- and macro-deformation profiles in GaN nanowires (NWs) on the angular intensity distribution of X-ray diffraction are studied theoretically. The calculations are performed by using kinematical theory of X-ray diffraction and assuming the deformation decays expone...

Deskribapen osoa

Gorde:
Xehetasun bibliografikoak
Argitaratua izan da:Nanoscale Res Lett
Egile Nagusiak: Stanchu, Hryhorii, Kladko, Vasyl, Kuchuk, Andrian V, Safriuk, Nadiia, Belyaev, Alexander, Wierzbicka, Aleksandra, Sobanska, Marta, Klosek, Kamil, Zytkiewicz, Zbigniew R
Formatua: Artigo
Hizkuntza:Inglês
Argitaratua: Springer US 2015
Gaiak:
Nano Express
Sarrera elektronikoa:https://ncbi.nlm.nih.gov/pmc/articles/PMC4385025/
https://ncbi.nlm.nih.gov/pubmed/25852348
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0766-x
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