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High-resolution X-ray diffraction analysis of strain distribution in GaN nanowires on Si(111) substrate
In this work, the influence of micro- and macro-deformation profiles in GaN nanowires (NWs) on the angular intensity distribution of X-ray diffraction are studied theoretically. The calculations are performed by using kinematical theory of X-ray diffraction and assuming the deformation decays expone...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4385025/ https://ncbi.nlm.nih.gov/pubmed/25852348 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0766-x |
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