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Strong localization effect and carrier relaxation dynamics in self-assembled InGaN quantum dots emitting in the green
Strong localization effect in self-assembled InGaN quantum dots (QDs) grown by metalorganic chemical vapor deposition has been evidenced by temperature-dependent photoluminescence (PL) at different excitation power. The integrated emission intensity increases gradually in the range from 30 to 160 K...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer US
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4384949/ https://ncbi.nlm.nih.gov/pubmed/25852328 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/s11671-015-0772-z |
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