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The reason why thin-film silicon grows layer by layer in plasma-enhanced chemical vapor deposition
Thin-film Si grows layer by layer on Si(001)-(2 × 1):H in plasma-enhanced chemical vapor deposition. Here we investigate the reason why this occurs by using quantum chemical molecular dynamics and density functional theory calculations. We propose a dangling bond (DB) diffusion model as an alternati...
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| Publicado no: | Sci Rep |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Nature Publishing Group
2015
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4360731/ https://ncbi.nlm.nih.gov/pubmed/25772469 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep09052 |
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