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Dislocation luminescence in GaN single crystals under nanoindentation
This work presents an experimental study on the dislocation luminescence in GaN by nanoindentation, cathodoluminescence, and Raman. The dislocation luminescence peaking at 3.12 eV exhibits a series of special properties in the cathodoluminescence measurements, and it completely disappears after anne...
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| Publicado no: | Nanoscale Res Lett |
|---|---|
| Main Authors: | , , , , , |
| Formato: | Artigo |
| Idioma: | Inglês |
| Publicado em: |
Springer
2014
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| Assuntos: | |
| Acesso em linha: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4275118/ https://ncbi.nlm.nih.gov/pubmed/25593548 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-649 |
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