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Mechanical Deformation Induced in Si and GaN Under Berkovich Nanoindentation
<p>Abstract</p><p>Details of Berkovich nanoindentation-induced mechanical deformation mechanisms of single-crystal Si(100) and the metal-organic chemical-vapor deposition (MOCVD) derived GaN thin films have been systematic investigated by means of micro-Raman spectroscopy and cross...
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| Auteur principal: | |
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| Format: | Artigo |
| Langue: | Inglês |
| Publié: |
SpringerOpen
2007-01-01
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| Collection: | Nanoscale Research Letters |
| Sujets: | |
| Accès en ligne: | http://dx.doi.org/10.1007/s11671-007-9106-0 |
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