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Mechanical Deformation Behavior of Nonpolar GaN Thick Films by Berkovich Nanoindentation

In this study, the deformation mechanisms of nonpolar GaN thick films grown on m-sapphire by hydride vapor phase epitaxy (HVPE) are investigated using nanoindentation with a Berkovich indenter, cathodoluminescence (CL), and Raman microscopy. Results show that nonpolar GaN is more susceptible to plas...

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Detalhes bibliográficos
Main Authors: Wei, Tongbo, Hu, Qiang, Duan, Ruifei, Wang, Junxi, Zeng, Yiping, Li, Jinmin, Yang, Yang, Liu, Yulong
Formato: Artigo
Idioma:Inglês
Publicado em: Springer 2009
Assuntos:
Acesso em linha:https://ncbi.nlm.nih.gov/pmc/articles/PMC2893916/
https://ncbi.nlm.nih.gov/pubmed/20596453
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1007/s11671-009-9310-1
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