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Homogeneous crystalline FeSi(2) films of c (4 × 8) phase grown on Si (111) by reactive deposition epitaxy
The growth of iron silicides on Si (111) using reactive deposition epitaxy method was studied by scanning tunneling microscopy and X-ray photoelectron spectroscopy (XPS). Instead of the mixture of different silicide phases, a homogeneous crystalline film of c (4 × 8) phase was formed on the Si (111)...
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| Pubblicato in: | Nanoscale Res Lett |
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| Autori principali: | , , , , |
| Natura: | Artigo |
| Lingua: | Inglês |
| Pubblicazione: |
Springer
2013
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| Soggetti: | |
| Accesso online: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4234272/ https://ncbi.nlm.nih.gov/pubmed/24305438 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-8-510 |
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