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Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition
High-quality AlN epitaxial films have been grown on Si substrates by pulsed laser deposition (PLD) by effective control of the interfacial reactions between AlN films and Si substrates. The surface morphology, crystalline quality and interfacial property of as-grown AlN/Si hetero-interfaces obtained...
में बचाया:
| में प्रकाशित: | Sci Rep |
|---|---|
| मुख्य लेखकों: | , , , , , |
| स्वरूप: | Artigo |
| भाषा: | Inglês |
| प्रकाशित: |
Nature Publishing Group
2015
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| विषय: | |
| ऑनलाइन पहुंच: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4473646/ https://ncbi.nlm.nih.gov/pubmed/26089026 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1038/srep11480 |
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