CORRIGENDUM: Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application

Схожие документы

• Nanocrystalline ZnON; High mobility and low band gap semiconductor material for high performance switch transistor and image sensor application
  по: Lee, Eunha, et al.
  Опубликовано: (2014)
• High mobility and high stability glassy metal-oxynitride materials and devices
  по: Lee, Eunha, et al.
  Опубликовано: (2016)
• Fast and slow transient charging of Oxide Semiconductor Transistors
  по: Kim, Taeho, et al.
  Опубликовано: (2017)
• Anion control as a strategy to achieve high-mobility and high-stability oxide thin-film transistors
  по: Kim, Hyun-Suk, et al.
  Опубликовано: (2013)
• Microsecond Pulse I–V Approach to Understanding Defects in High Mobility Bi-layer Oxide Semiconductor Transistor
  по: Woo, Hyunsuk, et al.
  Опубликовано: (2017)