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Advanced Cu chemical displacement technique for SiO(2)-based electrochemical metallization ReRAM application
This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO(2)-stacked resistive random-access memory (ReRAM). Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insu...
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| Hauptverfasser: | , , , , , , , |
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| Format: | Artigo |
| Sprache: | Inglês |
| Veröffentlicht: |
Springer
2014
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| Schlagworte: | |
| Online Zugang: | https://ncbi.nlm.nih.gov/pmc/articles/PMC4214826/ https://ncbi.nlm.nih.gov/pubmed/25364318 https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-592 |
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