Advanced Cu chemical displacement technique for SiO(2)-based electrochemical metallization ReRAM application

This study investigates an advanced copper (Cu) chemical displacement technique (CDT) with varying the chemical displacement time for fabricating Cu/SiO(2)-stacked resistive random-access memory (ReRAM). Compared with other Cu deposition methods, this CDT easily controls the interface of the Cu-insu...

Ful tanımlama

Kaydedildi:
Detaylı Bibliyografya
Asıl Yazarlar: Chin, Fun-Tat, Lin, Yu-Hsien, You, Hsin-Chiang, Yang, Wen-Luh, Lin, Li-Min, Hsiao, Yu-Ping, Ko, Chum-Min, Chao, Tien-Sheng
Materyal Türü: Artigo
Dil:Inglês
Baskı/Yayın Bilgisi: Springer 2014
Konular:
Nano Express
Online Erişim:https://ncbi.nlm.nih.gov/pmc/articles/PMC4214826/
https://ncbi.nlm.nih.gov/pubmed/25364318
https://ncbi.nlm.nih.govhttp://dx.doi.org/10.1186/1556-276X-9-592
Etiketler: Etiketle
Etiket eklenmemiş, İlk siz ekleyin!

Benzer Materyaller